No. 1688, Gaoke East Road, Pudong new district, Shanghai, China.
No. 1688, Gaoke East Road, Pudong new district, Shanghai, China.
Application of the NDD film allowed us to obtain the sensor of hemoglobin concentration with linear work characteristics with a correlation coefficient (R2) equal to 0.988. In this work we present the fabrication and characterization of a diamond film which can be utilized in the construction of optical sensors for the investigation of ...
Despite the generally large lattice mismatch between diamond and the substrate materials, microwave-assisted CVD has been successful in the fabrication of thin diamond films of high …
Methane concentration is a very important parameter for the growth of diamond films, and different methane concentrations will affect various aspects of diamond films, including grain morphology and purity. In this section, the effect of different methane concentrations on the growth of diamond films will be investigated.
drogen to create a super-equilibrium concentration of gas-phase hydrogen atoms. Four commonly used diamond CVD reactors to achieve the activation are: hot-filament reactors, microwave …
DOI: 10.1016/j.surfcoat.2024.130802 Corpus ID: 269203161; Fabrication of diamond film under low methane concentration by hot filament chemical vapor deposition with magnetic field assistance
For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be ...
Compared to previous studies, the carrier (hole) concentrations of boron-doped diamond increases, and the Hall mobility decreases (Table 1), which are due to the presence of a large number of five-fold twin structures at the BDD film surface, considerably increasing the number of twin boundaries on the surface. Moreover, as boron atoms ...
The formation of Si-rich porous oxides in the as-annealed samples implies that the Si concentration is high in the as-deposited diamond film. A major part of Si atoms may accumulate along the diamond GBs, except for a small fraction introduced into the diamond grains during the film deposition process [ 13, 29 ].
Defect formation during diamond homoepitaxial growth was sufficiently inhibited by adding oxygen simultaneously in the growth ambient with high concentration of 2%. A 30-μm thick diamond films with surface roughness of 100 W cm−3. Surface characteristic patterns moved to an identical direction with growth thickness, indicating that lateral growth was …
The quality of the chemical vapor deposition (CVD) diamond films might be defined from several aspects, such as hardness, elasticity, tribological property, thermal conductivity, electrical conductivity and so on, according to the different applications [[1], [2], [3]].For the diamond films deposited on the cemented carbide (WC-Co) cutting tools as wear-resistant and …
The hot-filament activated chemical vapor deposition (HFCVD) technique has been extensively employed to produce polycrystalline diamond films, hard coatings, boron …
This study is a numerical modeling of transport phenomena occurring in the reaction chamber during diamond or amorphous hydrogenated carbon films growth by a hot filament chemical vapor deposition (HFCVD) technique. A two-dimensional model was adopted to study the HFCVD reactor. The equations of heat, momentum, and mass transfer were solved …
Figure 1(a) schematically illustrates the process flow to form the large-area, freestanding diamond films. The fabrication begins with growing diamond thin films (with a thickness of ∼10 μm) on single crystalline silicon (100) substrates (with a diameter of 50 mm) via CVD.Before growth, Si substrates are abraded by sand paper (800#) and then cleaned …
The polycrystalline diamond films in the cases of the BDD-600 ppm and BDD-2500 ppm are dominated by the triangular (111) facets, whose grain sizes are concentrated between 2 and 4 μm. However, the average grain size of diamonds visibly decreases as the boron content rises. ... The band at 500 cm −1 is used to estimate the boron concentration ...
For diamond films synthesized with a methane concentration in the range of 12. – 23.1 vol%, the I (220) /I (111) ratio is approximately the same with a value of 32 ± 2%. On the contrary, the I (311) /I (111) ratio was constant for all diamond films, including microcrystalline, and amounted to 23 ± 2%. This indicates decrease in the ...
An increase in the substrate temperature or methane concentration leads to a broadening of the diamond Raman peak and an increase in the sp 2 /sp 3 ratio of diamond films. The manipulation of the methane concentration and temperature has a complex and combined effect on the morphology, growth rate and phase composition of polycrystalline ...
Boron concentration, [B], ... For boron-doped diamond films, STM reports have been limited to hydrogenated (100)-oriented single crystalline films due to the smoothness of the resulting film at substrate temperatures (T ~ 1000 K) compared to other facets .
Diamond is a promising material with outstanding properties such as an exceptional hardness, an unrivalled thermal conductivity (> 2000 W·m-1 K-1), a high breakdown voltage and a large band gap (5.5 eV) together with resistance to harsh environments [[1], [2]].With the development of CVD synthetic technology, diamond is also expected to be used in many high …
Furthermore, as a result of stress concentration, the mechanochemical effect of the grinding wheel was significantly enhanced, resulting in a high rate of material removal. Download: Download high-res image (193KB) Download ... SEM images of the diamond film after grinding under 600 rpm at (a) 300 N, (b) 400 N, (c) 500 N, (d) 600 N grinding ...
The effect of precursor stoichiometry is reported on morphology, phase purity, and texture formation of polycrystalline diamond films. The diamond films were deposited on 100-mm Si (100) substrates using hot filament chemical vapor deposition at substrate temperature 720–750 °C using a mixture of methane and hydrogen. The gas mixture was varied with …
Due to the fact that film thickness has a significant effect on solid particle erosion, the deposition time at different CH 4 concentration was varied to obtain an equal thickness of diamond coatings. SEM cross-sectional images of synthesized samples are shown in Fig. 1.As can be seen, only film deposited at 5.6 vol % of CH 4 has pronounced columnar structure …
In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample …
Abstract A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealing studies demonstrate diffusion of Ni into Si to form nickel silicides with crystal structure depending on temperature. …
Homoepitaxial diamond films are grown on HPHT and CVD diamond single-crystal substrates. The CVD growth in almost all cases is carried out on (100)-oriented substrates as …
The wettability and surface free energy of diamonds are crucial for their applications. In this study, polycrystalline boron-doped diamond (PBDD) films with different boron doping concentrations were prepared, and the effect of the boron doping concentration on the wettability and surface free energy (SFE) of the film was investigated. The SFEs of the PBDD …
For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and …
Dependence of the Young's modulus of diamond films on the methane concentration in the H 2 /CH 4 atmosphere of the hot filament process . Full size image. The performance of diamond coated components is determined by the properties of the surface region including the film-substrate interface with the nucleation zone. A porous interlayer, as ...
A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 10 13 to 10 20 cm~ 3.Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi …
Fourteen different diamond films were grown on Commercial standard single crystal silicon wafers with 3″ and 4″ and 〈100〉 orientation using a hot filament CVD reactor. ... Density and elastic constants of hot-filament-deposited polycrystalline diamond films: methane concentration dependence. Thin Solid Films, 312 (1) (1998), pp. 66-72.
In this review we will briefly discuss diamond properties, diamond applications, and diamond growth by chemical vapor deposition in 2 Properties and applications of diamond and diamond films, 3 CVD processes for diamond growth.Special attention is paid to recent advances in the understanding of the mechanism of diamond nucleation, metastable growth, as well as …
